Triode/MOS tube/transistor/module
FH (Feng Hua)
Fabricantes
minos (Minos)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.4-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 6
Descripción
MICROCHIP (US Microchip)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-160V, Ic=-1A, hfe=160~320
Descripción
NPN, Vo=50V, Io=100mA
Descripción
VISHAY (Vishay)
Fabricantes
NPN,Vceo=80V,Ic=1A
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
TMC (Taiwan Mao)
Fabricantes
Type N VDS(V) 40V VGS(V) ±20V Vth(V) 1.7V RDS(ON)(mΩ) 5.9mΩ ID(A) 80A
Descripción
P-channel, -20V, -3.7A
Descripción
YANGJIE (Yang Jie)
Fabricantes
MMST2907A-F2-0000HF
Descripción