Triode/MOS tube/transistor/module

Automotive power MOSFETs for low power applications. 60V, 340mA, 1.6 Ω, single N-channel, SC-70. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

2SA1417/2SC3647 is a bipolar transistor, (-)100V, (-)2A, low saturation voltage, (PNP)NPN single PCP, for high voltage switching applications.

The device includes two dedicated MOSFETs within a unique dual Power 56 encapsulation. It provides a synchronous buck power stage optimized for energy efficiency and PCB utilization. This low switching loss "high side" MOSFET is complemented by a low conduction loss "low side" SyncFET.

N-Channel 100V 0.2A 1.0W

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

NPN,Vceo=40V,Ic=200mA

Triode Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 200@100mA, 1V 200-350 NPN,Vceo=25V,Ic=1.5A

This high voltage NPN bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Field Effect Transistor (MOSFET) Type: Dual N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 8A Power (Pd): 3.8W On-Resistance (RDS(on)@Vgs,Id): 16mΩ@10V, 11A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 8.6nC@10V Input Capacitance (Ciss@Vds): 0.333nF@10V , Vds=30V Id =8A Rds=16mΩ, working temperature: -55℃~+150℃@(Tj)