Triode/MOS tube/transistor/module

Type DPNP IC(A) -0.2 VCBO(V) -40 VCEO(V) -40 VEBO(V) -5 VCE(sat)(V) -0.4

PNP

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.

PNP, Vceo=-65V, Ic=-0.1A, hfe=180~460

These N-channel power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias within 3V to 5V, thus enabling true direct switching from logic level (5V) ICs. switching power supply control. The previous development model was TA09870.

N-channel, 60V, 5.6A, 21mΩ@10V

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 313mW On-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V, 300mA