Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
Type NPN IC(A) 0.1 VCBO(V) 50 VCEO(V) 50 VEBO(V) 5 VCE(sat)(V) 0.4
Descripción
YONGYUTAI (Yongyutai)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
FUXINSEMI (Fuxin Senmei)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
onsemi (Ansemi)
Fabricantes
This single N-channel MOSFET is designed using an advanced Power Trench process to optimize rDS(ON) @ VGS = 1.8 V based on a custom MicroFET lead frame.
Descripción
YFW (You Feng Wei)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
MATSUKI (pine wood)
Fabricantes
RENESAS (Renesas)/IDT
Fabricantes
Convert Semiconductor
Fabricantes
Convert Semiconductor
Fabricantes
LOWPOWER (Weiyuan Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
P+P channel, -30V, -7.3A, 29mΩ@-10V
Descripción