Triode/MOS tube/transistor/module

Type: one N-channel one P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 40A/-45A Power (Pd): 25W On-resistance (RDS(on)@Vgs,Id): 10mΩ@10V,-15A ;12mΩ@-10V,-15A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA ;-1.7V@250uA Gate Charge (Qg@Vgs): 17nC@10V;30nC@ -4.5V input capacitance (Ciss@Vds): 1.58nF@0V; 2.65nF@-15V operating temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

PNP -30V -3A

N-channel, 40V, 36A, 0.0033Ω@10V

Type P VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS65°C(A) 10 RDS(Max) 73 PD65°C(W) 2.8

N-MOS 30V 95A DFN5x6 4.2mΩ@10V

N-type MOS tube VDS20V, ID20ARDS(on), Typ@VGS=10V20mR