Triode/MOS tube/transistor/module
MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 4.5/5.4 Continuous Drain Current ID (A) 120
Descripción
VISHAY (Vishay)
Fabricantes
NPN, Vceo=12V, Ic=100mA
Descripción
DIODES (US and Taiwan)
Fabricantes
ISC (Wuxi Solid Electric)
Fabricantes
Ultra high voltage MOS tube
Descripción
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 100V, 8.1A, 0.18Ω@10V
Descripción
onsemi (Ansemi)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
Shanghai Chaozhi
Fabricantes
VISHAY (Vishay)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-45V, Ic=-800mA, range: 160-400
Descripción
Ruichips (Ruijun Semiconductor)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 60V, 60A, 14mΩ@10V
Descripción
Convert Semiconductor
Fabricantes
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes