Triode/MOS tube/transistor/module
Cmos (Guangdong Field Effect Semiconductor)
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YFW (You Feng Wei)
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TECH PUBLIC (Taizhou)
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China Resources Huajing
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onsemi (Ansemi)
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N-channel, 40V, 35A, 15mΩ@10V
Descripción
PNP, Vceo=-45V, Ic=-100mA, hfe=420~800
Descripción
Infineon (Infineon)
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Doesshare (Dexin)
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PMOS -20V -2.3A RDS(on)=140mΩ
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Slkor (Sakor Micro)
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VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
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Techcode (TED)
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Type N Drain-Source Voltage (Vdss) 40 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 25 On-Resistance (mΩ) 2.9 Input Capacitance (Ciss) 2650 Reverse Transfer Capacitance Crss (pF) 88 Gate Charge (Qg ) 39
Descripción
HXY MOSFET (Huaxuanyang Electronics)
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Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 300mA Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 2Ω@ 10V,0.3A
Descripción
XCH (Xu Changhui)
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onsemi (Ansemi)
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DIODES (US and Taiwan)
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