Triode/MOS tube/transistor/module
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 1A Power (Pd): 1.3W DC current gain (hFE@Ic,Vce): 25@5mA, 2V
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-220, N-channel, 150V, 90A, 16mΩ (Max), 315W
Descripción
NPN, Vcc=50V, Ic=100mA
Descripción
P channel -30V -35A
Descripción
P channel 30V 230mA
Descripción
AGM-Semi (core control source)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
PNP,-150V,-1A
Descripción
Samwin (Semipower)
Fabricantes
SPS (American source core)
Fabricantes
N-channel, 650V, 7.5A, 1.5Ω
Descripción
onsemi (Ansemi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
N-channel, 20V, 540mA, 0.55Ω@4.5V
Descripción
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
WILLSEMI (Will)
Fabricantes
P-channel, -30V, -5.5A
Descripción