Triode/MOS tube/transistor/module
MOSFET Type P+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 53/60 Continuous Drain Current ID (A) 4.1
Descripción
onsemi (Ansemi)
Fabricantes
The MJW21194 bipolar complementary audio power transistor uses pierced emitter technology and is designed for high power audio output, disk head positioner and linear applications.
Descripción
VISHAY (Vishay)
Fabricantes
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD13383F4 12V N-Channel FemtoFET MOSFET 3-PICOSTAR
Descripción
PSI (Baolixin)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel 60V 25A
Descripción
Prisemi (core guide)
Fabricantes
SILAN (Silan Micro)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
N-CH 60V 0.17A
Descripción
TI (Texas Instruments)
Fabricantes
CSD17307Q5A 30V, N-Channel NexFET MOSFET™, Single SON5x6, 12.1mΩ
Descripción
APM (Jonway Microelectronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
FOSAN (Fuxin)
Fabricantes
DIODES (US and Taiwan)
Fabricantes