Triode/MOS tube/transistor/module

MOS tube type: 2 N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 280mW On-resistance (RDS(on)@Vgs,Id): 1.8Ω@10V ,300mA

P-channel, -30V, -12A, 13mΩ@-10V

HFE:100-300

N-channel 16V 6A

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Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 10 VGS(th)(v) - RDS(ON)(m?)@4.275V 20 Qg(nC)@4.5V 12 QgS(nC) 5 Qgd(nC) 5 Ciss(pF) 2370 Coss(pF) 135 Crss(pF) 60

NPN

Silicon carbide MOS 1200V60A internal resistance 40 milliohms

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 14A Power (Pd): 83W On-Resistance (RDS(on)@Vgs,Id): 7.2mΩ@10V,12A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 23nC@10V Input capacitance (Ciss@Vds): 1.45nF@20V, Vds=60V Id=14A Rds=7.2mΩ, working Temperature: -55℃~+150℃@(Tj)