Triode/MOS tube/transistor/module

Field effect transistor (MOSFET) type: N-channel drain-source voltage (Vdss): 30V continuous drain current (Id): 150A power (Pd): 130W on-resistance (RDS(on)@Vgs,Id): 1.7mΩ @10V,20A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 99nC@10V Input Capacitance (Ciss@Vds): 5.6nF@15V ,Vds=30V Id=150A Rds=1.7mΩ, working temperature: -55℃~+150℃@(Tj);

N-channel, 20V, 6A, 28mΩ@4.5V

N-channel 650V 4A

PNP, Vceo=-80V, Ic=-500mA

N channel

PNP, Vceo=-60V, Ic=-600mA