Triode/MOS tube/transistor/module
Samwin (Semipower)
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VBsemi (Wei Bi)
Fabricantes
N-channel, 300V, 11.5A, 0.42Ω@10V
Descripción
VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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SPTECH (Shenzhen Quality Super)
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CJ (Jiangsu Changdian/Changjing)
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Sensitive thyristor IGT binning AC 20—25uA
Descripción
onsemi (Ansemi)
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onsemi (Ansemi)
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AGM-Semi (core control source)
Fabricantes
Type: P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 60A Power (Pd): 30W On-resistance (RDS(on)@Vgs, Id: 11mΩ@10V, 12A Threshold voltage (Vgs (th)@Id): -1.7V@250uA Gate charge (Qg@Vgs): 72nC@10V Input capacitance (Ciss@Vds): 2.66nF@20V, Vds=40v Id=60A Rds=11mΩ, operating temperature: -55℃~+150℃@(Tj)
Descripción
AGM-Semi (core control source)
Fabricantes
Type: P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 60A Power (Pd): 30W On-resistance (RDS(on)@Vgs, Id: 11mΩ@10V, 12A Threshold voltage (Vgs (th)@Id): -1.7V@250uA Gate charge (Qg@Vgs): 72nC@10V Input capacitance (Ciss@Vds): 2.66nF@20V, Vds=40v Id=60A Rds=11mΩ, operating temperature: -55℃~+150℃@(Tj)
Descripción
Slkor (Sakor Micro)
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China Resources Huajing
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SINO-IC (Coslight Core)
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N-channel 60V 16A
Descripción
YFW (You Feng Wei)
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NCE (Wuxi New Clean Energy)
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