Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
Fabricantes
LOWPOWER (Weiyuan Semiconductor)
Fabricantes
20V N+N channel MOS
Descripción
TOSHIBA (Toshiba)
Fabricantes
N-channel, 600V, 9.7A, 0.38Ω@10V
Descripción
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel, 600V, 10A, 0.8Ω
Descripción
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
Descripción
WEIDA (Weida)
Fabricantes
onsemi (Ansemi)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 14/18 Continuous Drain Current ID (A) 9
Descripción
DESAY (Desay Micro)
Fabricantes
Ultra high voltage MOS tube
Descripción
Shanghai Chaozhi
Fabricantes
MCC (Meiweike)
Fabricantes