Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
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onsemi (Ansemi)
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PANJIT (Qiangmao)
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JSMSEMI (Jiesheng Micro)
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MSKSEMI (Mesenco)
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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): -80V Collector Current (Ic): -1A Power (Pd): 1.5W Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V
Descripción
SALLTECH (Sari)
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DIODES (US and Taiwan)
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China Resources Huajing
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CJ (Jiangsu Changdian/Changjing)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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onsemi (Ansemi)
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Small Signal MOSFET -12V -3.3A 60 mΩ Single P-Channel SC-88 with ESD Protection
Descripción
Cmos (Guangdong Field Effect Semiconductor)
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Semiconductor Transistor Field Effect Transistor MOS tube, TO-263, N channel, withstand voltage: 150V, current: 157A, 10V internal resistance (Max): 0.0065Ω, power: 375W
Descripción
TOSHIBA (Toshiba)
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SILAN (Silan Micro)
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ElecSuper (Jingxin Micro)
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KY (Han Kyung Won)
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