Triode/MOS tube/transistor/module

P-channel, -12V, -6A, 30mΩ@-4.5V

N-CH

This high voltage PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel 20V 4.2A

Type N+N VDSS(V) 60 ID@TC=79?C(A) 3.6 PD@TC=79?C(W) 2.1 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.59V 104

N tube, 30V, 3.6A, 1.5V on, 47mΩ(typ)@10V, 61mΩ(typ)@4.5V