Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
N-channel, 100V, 57A, 24mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
PNP, Vceo=-600V, Ic=-1A, hfe=60~120
Descripción
TWGMC (Taiwan Dijia)
Fabricantes
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 200@100mA,1V 200-350 NPN ,Vceo=25V,Ic=1.5A
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
2 NPN (dual) pairs
Descripción
Infineon (Infineon)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
TI (Texas Instruments)
Fabricantes
ULN2003A High Voltage, High Current Darlington Transistor Array
Descripción
VISHAY (Vishay)
Fabricantes
FOSAN (Fuxin)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
NPN, Vceo=160V, Ic=1A, hfe=160~320
Descripción
onsemi (Ansemi)
Fabricantes
This dual PNP bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-363/SC-88 encapsulation and is suitable for low power surface mount applications.
Descripción