Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Double PNP, Vceo=-150V, Ic=-0.2A
Descripción
TI (Texas Instruments)
Fabricantes
ULN2003AI High Voltage, High Current Darlington Transistor Array
Descripción
TI (Texas Instruments)
Fabricantes
30V N-Channel NexFET Power MOSFET 8-VSONP -55 to 150
Descripción
MICROCHIP (US Microchip)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
TI (Texas Instruments)
Fabricantes
ULN2003AI High Voltage, High Current Darlington Transistor Array
Descripción
DIODES (US and Taiwan)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Agertech (Agertech)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
onsemi (Ansemi)
Fabricantes
This high voltage NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes