Triode/MOS tube/transistor/module
NPN,Vceo=40V,Ic=200mA
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is designed to increase the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is designed to increase the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.
Descripción
TI (Texas Instruments)
Fabricantes
CSD25484F4 CSD25484F4 20V P-Channel FemtoFET MOSFET
Descripción
onsemi (Ansemi)
Fabricantes
This device is specifically designed for battery charging or load switching in cell phones and other ultra-portable applications. It has a MOSFET with low on-resistance. For its physical size, the MicroFET 2x2 encapsulation has excellent thermal performance, making it ideal for linear mode applications.
Descripción
GOFORD (valley peak)
Fabricantes
CBI (Creation Foundation)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 600V, 55A, Vce(on)=2.30V
Descripción
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 40V, 100A, 0.002Ω@10V
Descripción
VISHAY (Vishay)
Fabricantes
N-channel, 40V, 100A, 0.002Ω@10V
Descripción
N-channel, 600V, 0.55?@10V, 12A
Descripción
Infineon (Infineon)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
ETERNAL (Yiyuan Technology)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
onsemi (Ansemi)
Fabricantes