Triode/MOS tube/transistor/module
Thyristor \\ Diode Module
Descripción
PANJIT (Qiangmao)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 650V, 5A
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
AnBon (AnBon)
Fabricantes
N-channel 30V, 5A, 50mΩ@2.5V
Descripción
ST (STMicroelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
HUXN (Huixin)
Fabricantes
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -45V Collector current (Ic): -500mA Power (Pd): 200mW Collector cut-off current (Icbo): -0.1uA DC current gain (hFE@Ic, Vce): 100@-100mA, -1V Operating temperature: -55℃~+150℃@(Tj)
Descripción
DELTAMOS (Dunwei)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 60V, 8A
Descripción