Triode/MOS tube/transistor/module
WINSOK (Weishuo)
Fabricantes
Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -11.5 VGS(th)(v) -1.8 RDS(ON)(m?)@4.439V 32 Qg( nC)@4.5V 13 QgS(nC) 1 Qgd(nC) 4 Ciss(pF) 580 Coss(pF) 105 Crss(pF) 72
Descripción
APM (Jonway Microelectronics)
Fabricantes
DIODES (US and Taiwan)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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NCE (Wuxi New Clean Energy)
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NMOS, 100V/130A, RDS=5.5mR; the nominal 72V battery is dedicated for brushless controllers (for electric picks, high cost performance).
Descripción
VBsemi (Wei Bi)
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onsemi (Ansemi)
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VBsemi (Wei Bi)
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LONTEN (Longteng Semiconductor)
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LONTEN (Longteng Semiconductor)
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AnBon (AnBon)
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GOFORD (valley peak)
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N tube, 100V, 15A, open 2.0V, 70mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
The CPH6350 is a P-channel power MOSFET, -30V, -6A, 43mΩ, single CPH6, for general switching applications.
Descripción
TECH PUBLIC (Taizhou)
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MICROCHIP (US Microchip)
Fabricantes
N-channel, 25V, 43A
Descripción