Triode/MOS tube/transistor/module
Drain-source voltage (Vdss): 200V continuous drain current (Id) 100A MOS tube
Descripción
TI (Texas Instruments)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
GOFORD (valley peak)
Fabricantes
60V 68A 7.9mΩ@10V
Descripción
PSI (Baolixin)
Fabricantes
onsemi (Ansemi)
Fabricantes
The EFC4621R is an N-channel power MOSFET, 24V, 9A, 18mΩ, dual EFCP, for Li-ion battery charge and discharge switching applications.
Descripción
onsemi (Ansemi)
Fabricantes
GL (Optics Lei)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD87333Q3D High Duty Cycle Synchronous Buck NexFET? 3x3 Power Block
Descripción
APM (Jonway Microelectronics)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
N-channel, 85V, 80A, 8.5mΩ@10V
Descripción
SILAN (Silan Micro)
Fabricantes
N-channel, 600V, 6A, 1.5Ω@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel 2.5V specified MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices feature excellent power dissipation in a very small footprint compared to larger SO-8 and TSSOP-8 encapsulations.
Descripción