Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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ST (STMicroelectronics)
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SILAN (Silan Micro)
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Cmos (Guangdong Field Effect Semiconductor)
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Semiconductor transistor field effect transistor MOS tube, TO-220F, N channel, withstand voltage: 200V, current: 18A, 10V internal resistance (Max): 0.17Ω, power: 35W
Descripción
PSI (Baolixin)
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VBsemi (Wei Bi)
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VISHAY (Vishay)
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DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=25V, Ic=1.5A, silk screen: Y1
Descripción
Leiditech (Lei Mao Electronics)
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ST (STMicroelectronics)
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Ultra high voltage MOS tube
Descripción
Sinopower (large and medium)
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SPTECH (Shenzhen Quality Super)
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AGM-Semi (core control source)
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Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 55A Power (Pd): 96W On-Resistance (RDS(on)@Vgs,Id): 9.3mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate Charge (Qg@Vgs): 21.8nC@10V Input Capacitance (Ciss@Vds): 1.08nF@50V , Vds=100V Id=55A Rds=9.3mΩ, Working temperature: -55℃~+150℃@(Tj) DFN5x6encapsulation;
Descripción
onsemi (Ansemi)
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GOFORD (valley peak)
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ST (STMicroelectronics)
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DIODES (US and Taiwan)
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N-channel, Vce=650V, Ic=160A
Descripción