Triode/MOS tube/transistor/module
Número de pieza
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
94479 PCS
En stock
Número de pieza
AGM-Semi (core control source)
Fabricantes
General materials (low voltage MOSFET power supply, energy storage power supply, etc.), Vds=-30V Id=-65A Rds=6.5mΩ (8.5mΩ maximum) TO-252encapsulation;
Descripción
71505 PCS
En stock
Número de pieza
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN,Vceo=40V,Ic=0.2A
Descripción
69079 PCS
En stock
Número de pieza
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: P channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 4.5Ω@10V, 300mA
Descripción
65061 PCS
En stock
