Triode/MOS tube/transistor/module
HUAYI (Hua Yi Wei)
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SHIKUES (Shike)
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DIODES (US and Taiwan)
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Infineon (Infineon)
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RealChip (Shenxin Semiconductor)
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TOSHIBA (Toshiba)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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25A thyristor
Descripción
onsemi (Ansemi)
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This bipolar power transistor is suitable for line-operated audio output amplifiers, switch-mode power drivers, and other switching applications.
Descripción
Regent Energy
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Doesshare (Dexin)
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TECH PUBLIC (Taizhou)
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DIODES (US and Taiwan)
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AGM-Semi (core control source)
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Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 90A Power (Pd): 135W On-Resistance (RDS(on)@Vgs,Id): 8.2mΩ@10V,25A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate charge (Qg@Vgs): 138nC@10V Input capacitance (Ciss@Vds): 6.55nF@30V, Vds=60V Id=90A Rds=8.2mΩ, working Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;
Descripción
KY (Han Kyung Won)
Fabricantes