Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
The device is suitable for general purpose RF amplifier and mixer applications up to 250 mHz with collector currents in the 1.0 mA to 30 mA range. From Process 75.
Descripción
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Infineon (Infineon)
Fabricantes
Galaxy Microelectronics
Fabricantes
MATSUKI (pine wood)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
VISHAY (Vishay)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJD80N03A-F2-3000HF
Descripción
VBsemi (Wei Bi)
Fabricantes
NPN, Vceo=20V, Ic=2A
Descripción
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN,Vceo=60V,Ic=1A
Descripción