Triode/MOS tube/transistor/module

P-channel drain-source voltage (Vdss): 30V Continuous drain current (Id): 12A Power (Pd): 2.5W On-resistance (RDS(on)@Vgs,Id): 11mΩ@10V, 12A P-channel, PowerTrench MOSFET, -30V, -12A, 20mΩ This P-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance. This device is suitable for

N-channel drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.5Ω@10V, 300mA N-channel, 60V,0.3A,2.5Ω@10V

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 3.5A Power (Pd): 500mW On-Resistance (RDS(on)@Vgs,Id): 160mΩ@4.5V,1.5A N Trench Logic Level Enhancement Mode Field Effect Transistor, 20V, 3.5A, 0.05Ω

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel 100V 4.5A

P channel

NPN 30V 5A