Triode/MOS tube/transistor/module
P channel -40V -33A
Descripción
MICROCHIP (US Microchip)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 160@100mA,1V
Descripción
Two-way triode with built-in resistor
Descripción
Wuxi Unisplendour
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Semiconductor Transistor Field Effect Transistor MOS tube, TO-247, N channel, withstand voltage: 300V, current: 90A, 10V internal resistance (Max): 0.046Ω, power: 610W
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 120 VGS(V) 20 ID(A)Max. 70 VGS(th)(v) - RDS(ON)(m?)@4.223V 18 Qg(nC)@4.5V - QgS(nC) 5.6 Qgd(nC) 7.2 Ciss(pF) 2640 Coss(pF) 330 Crss(pF) 11
Descripción
ElecSuper (Jingxin Micro)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=400V, Ic=200mA, hfe=100~200
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Wayon (Shanghai Wei'an)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
Megapower (Credit Suisse)
Fabricantes
Integrated PNP transistor and MOS tube
Descripción
DIODES (US and Taiwan)
Fabricantes