Triode/MOS tube/transistor/module

Ultra high voltage MOS tube

PNP

NPN, Vceo=100V, Ic=3A, hfe=140~280

Dual N-channel, 60V, 8A, 17.8mΩ@10V

Type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 5.8A Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 35mΩ@10V, 5.8A

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 15 VGS(th)(v) 1.5 RDS(ON)(m?)@4.389V 110 Qg(nC)@4.5V - QgS(nC) 3.2 Qgd(nC) 6 Ciss(pF) 730 Coss(pF) 37 Crss(pF) 27

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 16A Power (Pd): 35W On-Resistance (RDS(on)@Vgs,Id): 75mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 6nC@10V Input capacitance (Ciss@Vds): 0.52nF@50V, Vds=100V Id=16A Rds=75mΩ, operating temperature: -55℃~+150℃@(Tj);

N-channel, Vds=30V