Triode/MOS tube/transistor/module
NCE (Wuxi New Clean Energy)
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LONTEN (Longteng Semiconductor)
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onsemi (Ansemi)
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This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
Descripción
Samwin (Semipower)
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YANGJIE (Yang Jie)
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TOSHIBA (Toshiba)
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TECH PUBLIC (Taizhou)
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WINSOK (Weishuo)
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Configuration Dual+ESD Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 7.5 VGS(th)(v) 0.7 RDS(ON)(m?)@4.287V 20 Qg(nC)@ 4.5V 10.3 QgS(nC) 2.4 Qgd(nC) 3.2 Ciss(pF) 620 Coss(pF) 110 Crss(pF) 115
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ST (STMicroelectronics)
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JJW (Jiejiewei)
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Three-quadrant Triac 25A/800V, SMD encapsulation
Descripción
ST (STMicroelectronics)
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N-channel, 950V, 3.5A, 2.5Ω@10V
Descripción
Infineon (Infineon)
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N-channel, 600V, 2.6A, 3.4Ω@10V
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ST (STMicroelectronics)
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VISHAY (Vishay)
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N-MOS tube, encapsulationPowerPAK1212-8(3mmX3mm)
Descripción
Slkor (Sakor Micro)
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Infineon (Infineon)
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N-channel, 55V, 49A, 17.5mΩ@10V
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes