Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
SHIKUES (Shike)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
CBI (Creation Foundation)
Fabricantes
onsemi (Ansemi)
Fabricantes
NPN Darlington tube VCEO=100V, -65℃~150℃
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
AGM-Semi (core control source)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 12 ID(A)Max. 5.2 VGS(th)(v) 0.8 RDS(ON)(m?)@4.29V 35 Qg(nC)@4.5V 5.5 QgS(nC) 2.1 Qgd(nC) 1.5 Ciss(pF) 525 Coss(pF) 57 Crss(pF) 45
Descripción
Infineon (Infineon)
Fabricantes
SI (deep love)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 150V, 21A
Descripción
WILLSEMI (Will)
Fabricantes
onsemi (Ansemi)
Fabricantes