Triode/MOS tube/transistor/module
PINGWEI (Pingwei)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Low-voltage MOSFET power supply, energy storage power supply, UPS, Vds=150V Id=135A Rds=6.2mΩ (7.3mΩ max)
Descripción
N-channel 7A 650V
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
N-channel, 600V, 4A
Descripción
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 80V Collector current (Ic): 1A Power (Pd): 1.3W DC current gain (hFE@Ic,Vce): 40@500mA, 2V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 10A(Pd): 55W On-Resistance (RDS(on)@Vgs,Id): 3.5mΩ@10V, Threshold Voltage (Vgs (th)@Id): 1.0V@250μA
Descripción
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
China Resources Huajing
Fabricantes
NPN,Vceo=400V,Ic=500mA
Descripción
Samwin (Semipower)
Fabricantes
Prisemi (core guide)
Fabricantes
N-channel, 20V, 1A, 0.2Ω@4.5V
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes